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| 50 10V 40 30 4.5V 3.5V 30 25 3V 20 Vds=5V Id (A) Id(A) 15 125C 10 20 10 Vgs=2.5V 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 5 25C 0 0.5 1 1.5 2 2.5 3 Vgs(Volts) Figure 2: Transfer Characteristics 16 1.8 Normalized On-Resistance Id=10A 1.6 Vgs=10V 14 Vgs=4.5V Rds(on) (m:) Vgs=4.5V 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 12 10 Vgs=10V 8 0 5 10 15 20 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 40 Id=10A 30 1.0E+01 Vgs=0V 1.0E+00 125C 100 1.0E-01 Rds(on) (m:) 125C 20 Is (A) 1.0E-02 25C 1.0E-03 10 25C 1.0E-04 1.0E-05 0 2 4 6 8 10 0.0 0.4 0.6 0.8 Vsd (Volts) Figure 6: Body-Diode Characteristics 0.2 1.0 0 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 5 4 1500 Vds=15V Id=12A 1250 Ciss Capacitance (pF) Vgs (Volts) 1000 750 500 250 Coss 3 2 1 0 0 2 4 6 8 10 12 Crss 0 15 20 25 Vds (Volts) Figure 8: Capacitance Characteristics 5 10 30 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 Rds(on) limited 10Ps 1ms 10ms 0.1s 1s 1.0 Tj(max)=150C Ta=25C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 100Ps 50 40 Tj(max)=150C Ta=25C Id (Amps) Power (W) 10.0 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=40C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 100 1 0.1 Single Pulse 0.01 0.00001 Pd Ton T 100 1000 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 70 Id(A), Peak Avalanche Current 60 50 40 30 20 10 0 0.00001 Ta=25C Power Dissipation (W) 4 3 ta L Id BV Vdd 2 10s 1 SteadyState 0 0.0001 Time in avalanche, tA (s) Figure 12: Avalanche capability 0.001 25 75 100 125 Tcase (C) Figure 13: Power De-rating (Note A) 50 150 |
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